Characteristics of lift-off fabricated AlGaAs/InGaAs single-strained-quantum-well structures on glass and silicon substrates

A technique involving the liftoff of thin (approx 1 micron) III-V structures grown on GaAs substrates and subsequent bonding to glass or SiO2 -covered Si substrates has been investigated. AlGaAs/InGaAs/GaAs single-strained-quantum-well structures have been grown by molecular beam epitaxy and characterized before and after lift-off and bonding to foreign substrates. X-ray diffraction measurements were performed to determine the strain state of the films over a wide temperature range after bonding. Low-temperature photoluminescence measurements on 125-A-well undoped structures show that the narrow linewidths observed in the as-grown samples (approx 4 MeV) are not broadened by the lift-off and bonding process. Room- and low-temperature dc measurements made on modulation-doped field-effect transistors show that electronic transport properties are not adversely affected by this process.