Sol-gel processing of metal-oxide-semiconductor structures

We have investigated the electronic properties of sol-gel derived films on silicon substrates. Our investigation involves SiO2, aluminosilicate and borosilicate oxides on silicon. Some sol-gel oxides are excellent insulators; some sol-gel films on silicon also exhibit quite low oxidesilicon interface state densities. We have also subjected sol-gel films on silicon to 4 MRAD of radiation and have found that these structures appear to be radiation hard (very little oxide space charge or interface state generation). The results strongly suggest that sol-gel processing could provide insulating films for a variety of microelectronic device applications.