The properties of CdS/CuInSe2 and CdSe/CuInSe2 heterojunctions prepared through chemical deposition
Abstract
A technique for the chemical deposition of thin n-CdS and n-CdSe layers on the surfaces of p-CuInSe2 polycrystals is described. The dark volt-ampere characteristics and the photosensitivity of heterojunctions obtained using this process are investigated at a temperature of 300 K. It is concluded that this technique is a cost effective and technically efficient one for the preparation of heterojunctions that are photosensitive in a wide wavelength range.
- Publication:
-
Zhurnal Tekhnicheskoi Fiziki
- Pub Date:
- February 1988
- Bibcode:
- 1988ZhTFi..58..350B
- Keywords:
-
- Cadmium Sulfides;
- Copper Selenides;
- Deposition;
- Heterojunctions;
- Indium Compounds;
- Thin Films;
- Chemical Reactions;
- Photosensitivity;
- Polycrystals;
- Selenides;
- Solar Cells;
- Volt-Ampere Characteristics;
- Solid-State Physics