Studies of the Gallium-Arsenide (110) Heterojunction and Other Iii-V Interfaces.
Abstract
The understanding of the Si/GaAs heterojunction promises to provide a myriad of new device possibilities by combining the industrially important Si and GaAs technologies on the same chip. While most previous heterojunction studies have focused on a small set of interfacial properties, we have combined electronic, structural and chemical measurements to study the correlations between these properties and to fully characterize this heterojunction. In situ photoemission, polarization dependent surface extended x-ray absorption fine structure, near edge structure, low energy electron diffraction and Auger electron spectroscopy were used to characterize on the atomic scale the chemistry, morphology, band bending, valence band discontinuity, crystalline order and overlayer strain during the initial stages of growth. By varying the growth temperature we were able to control the overlayer crystalline quality and the importance of kinetic barriers. In general we found the interface to be laminar and abrupt to within one or two atomic layers with chemical reactions confined to this interfacial region. High temperature growths resulted in epitaxial overlayers while room temperature growth produced amorphous material with a large density of defect states in the band gap. The valence band discontinuity was found to be independent of the anisotropic strain and crystalline order of the overlayer. Reactive metal/InP interfaces were also studied by photoemission to evaluate a predicted correlation between Schottky barrier height and chemical reactivity. No such correlation was found.
- Publication:
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Ph.D. Thesis
- Pub Date:
- 1988
- Bibcode:
- 1988PhDT........96L
- Keywords:
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- Physics: Condensed Matter