A laser array based on a multipass p-n heterostructure
Abstract
The paper is concerned with the effect of reradiation on the principal performance characteristics of laser arrays based on multipass p-n heterostructures. With reference to experimental results obtained for laser diodes based on two-sided epitaxial GaAlAs p-n heterostructures, it is shown that reradiation effects and a decrease in threshold current density lead to significant increases in the steepness of the watt-ampere characteristic, maximum output power, and conversion efficiency. The experimentally observed efficiency of current conversion to output emission was in excess of 80 percent.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- December 1988
- Bibcode:
- 1988PZhTF..14.2140B
- Keywords:
-
- Heterojunction Devices;
- P-N Junctions;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Silicon Dioxide;
- Volt-Ampere Characteristics;
- Lasers and Masers