Optically excited semiconductors at low and extremely low temperatures
Abstract
Systems of optically excited high-density current carriers in semiconductors are investigated for the case where excitons are condensed into electron-hole drops. The use of low and extremely low temperatures makes it possible to observe a series of new physical phenomena. The properties of electron-hole drops are calculated for quasi-one-dimensional and quasi-two-dimensional semiconductor structures and for polar semiconductors. Attention is given to the metal-dielectric transition; radiative recombination and the effect of nonequilibrium phonons on the properties of electron-hole drops; multiparticle exciton-impurity complexes; and the behavior of nonequilibrium carriers in moderately alloyed semiconductors.
- Publication:
-
Moscow Izdatel Nauka
- Pub Date:
- 1988
- Bibcode:
- 1988MoIzN.188.....F
- Keywords:
-
- Low Temperature Physics;
- Semiconductors (Materials);
- Antimony Compounds;
- Arsenic Compounds;
- Carrier Density (Solid State);
- Electron-Hole Drops;
- Excitons;
- Germanium Compounds;
- Phase Transformations;
- Phonons;
- Photoluminescence;
- Radiative Recombination;
- Semiconductor Plasmas;
- Silicon Compounds;
- Solid-State Physics