Laser deposition and optical investigation of thin Ga(x)In(1-x)As(y)Sb(1-y) films of different compositions

Films of GaInAsSb solid solutions, obtained by the laser mixing method, are investigated. The lattice parameters and film compositions are determined, and the corresponding forbidden zone widths are found to be in good agreement with the values obtained in an optical study. The spectral dependence of the quantum well effect observed for a 29-nm-thick film is consistent with the analytical expression proposed here.