Growth characteristics of a vertical rotating-disk OMVPE reactor
Abstract
Growth of GaAs/AlGaAs epilayers and finite-element calculations of steady-state momentum, heat, and mass balances have been used to characterize a vertical rotating-disk OMVPE reactor operating at reduced pressure (0.2 atm). Recirculation-free gas flow is predicted for typical operating conditions. Calculations of thickness and compositional uniformity are in good agreement with experimental results. Thickness uniformity of 1% and compositional uniformity of ±0.0003 for Al xGa 1- xAs, x = 0.2927, have b obtained for epilayers grown on 5 cm diameter substrates.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 1988
- DOI:
- 10.1016/0022-0248(88)90532-5
- Bibcode:
- 1988JCrGr..93..228W
- Keywords:
-
- Aluminum Gallium Arsenides;
- Chemical Reactors;
- Organometallic Compounds;
- Vapor Phase Epitaxy;
- Carrier Density (Solid State);
- Finite Element Method;
- Photoluminescence;
- Rotating Disks;
- Substrates;
- Temperature Distribution;
- Solid-State Physics