Excited states of the Mg acceptor in GaAs
Abstract
Selective pair luminescence (SPL) has been used to measure the excited states of shallow acceptors in undoped vapor-phase epitaxial (VPE) grown GaAs and Mg-implanted VPE GaAs. A set of experimental data for Mg excited states in GaAs is presented here. The results show that the 2P3/2 -, 2S3/2 -, and 2P5/2 -1S3/2 energy differences are 17.0, 20.0, and 21.0 meV, respectively. The value of the 2S3/2 state agrees very well with the previously reported two-hole transition luminescence result, and the other two values for the excited states agree very well with those reported for far-infrared Fourier transform spectroscopy. This assignment was further confirmed by making SPL measurements on Mg-implanted GaAs.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- December 1988
- DOI:
- 10.1063/1.342009
- Bibcode:
- 1988JAP....64.6761C
- Keywords:
-
- Acceptor Materials;
- Atomic Excitations;
- Gallium Arsenides;
- Magnesium;
- Vapor Phase Epitaxy;
- Electron Transitions;
- Energy Gaps (Solid State);
- Fourier Transformation;
- Ground State;
- Infrared Spectroscopy;
- Photoluminescence;
- Temperature Dependence;
- Solid-State Physics