Bias control of long term radiation-induced transients in GaAs MESFETs
Abstract
The effect of guard-ring bias and self-bias on radiation-induced long-term transients in GaAs D-MESFETs was measured for dose rates up to 1 Trad(GaAs)/sec. Results are presented for both ohmic and Schottky guard rings, with the substrate-bottom grounded as well as separately biased. Significant reduction in recovery times and transient amplitudes suggests that these are viable radiation-hardening techniques, allowing less dependence on the device fabrication process.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1988
- DOI:
- 10.1109/23.25478
- Bibcode:
- 1988ITNS...35.1444C
- Keywords:
-
- Electric Potential;
- Field Effect Transistors;
- Gallium Arsenides;
- Radiation Effects;
- Radiation Hardening;
- Bias;
- Integrated Circuits;
- Low Noise;
- Schottky Diodes;
- X Ray Irradiation;
- Electronics and Electrical Engineering