Application and evaluation of direct-write electron beam for ASIC's
Abstract
The application of direct-write electron-beam (DW-EB) technology to 1.3-micron fine geometry and high-density 24K-gate CMOS VLSI is investigated. Particular attention is paid to EB radiation damage of MOS devices and the effectiveness of DW-EB for CMOS application-specific integrated circuit (ASIC) VLSIs. To increase throughput for direct-writing and maintain good resolution, a high-sensitivity EB resist and appropriate proximity-effect correction method are adopted. EB radiation damage cannot be observed when low-electron beam dosage is applied to thin 25-micron oxide lightly doped drain (LDD) structure devices, thus making DW-EB applicable for fabricating CMOS VLSIs. Good electrical characteristics, high reliability and good yield can also be obtained. The advantages of DW-EB for quick turnaround time and more efficient debugging capability by forming different VLSIs on the same wafer are discussed.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1988
- DOI:
- 10.1109/4.1015
- Bibcode:
- 1988IJSSC..23..514F
- Keywords:
-
- Application Specific Integrated Circuits;
- Cmos;
- Doped Crystals;
- Electron Beams;
- Logic Circuits;
- Radiation Damage;
- Very Large Scale Integration;
- Carrier Lifetime;
- Chips (Electronics);
- Microstructure;
- Random Access Memory;
- Electronics and Electrical Engineering