Trends of deep level electron traps in Al<SUB>x</SUB>Ga<SUB>1 - x</SUB>As grown by molecular beam epitaxy

doi:10.1063/1.100333

Trends of deep level electron traps in Al_xGa_{1 - x}As grown by molecular beam epitaxy

Deep level transient spectroscopy is used to study one of the deep electron traps commonly seen in Al_xGa_1-xAs grown by molecular beam epitaxy (MBE). This trap, having the largest capture cross section of the commonly observed levels in MBE material, is measured in samples with Al composition varying from 8 to 40%. It is shown that the activation energy remains fixed with respect to the valence band, over the composition range studied. The trap is tentatively identified as a group III related vacancy. The effects of varying MBE growth parameters are discussed.

Publication:

Applied Physics Letters

Pub Date:

November 1988

DOI:

10.1063/1.100333

Bibcode:

1988ApPhL..53.1952P

Keywords:

Activation Energy;
Aluminum Gallium Arsenides;
Heterojunctions;
Line Spectra;
Molecular Beam Epitaxy;
Trapped Particles;
Electrons;
Germanium Alloys;
Gold Alloys;
Nickel;
Schottky Diodes;
Spectroscopy;
Solid-State Physics

NASA/ADS

Trends of deep level electron traps in AlxGa1 - xAs grown by molecular beam epitaxy

Abstract

Trends of deep level electron traps in Al_xGa_{1 - x}As grown by molecular beam epitaxy