Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
Abstract
We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to ``wires'' within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1988
- DOI:
- 10.1063/1.99832
- Bibcode:
- 1988ApPhL..53..782K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Excitons;
- Luminescence;
- Quantum Wells;
- Spectral Line Width;
- Etching;
- Gallium Arsenides;
- Microstructure;
- Solid-State Physics