High Tc YBa2Cu3O7 - x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target
Abstract
Thin films of YBa2Cu3O7-x were deposited on Si substrates at 600-700 °C by dc magnetron sputtering from a stoichiometric oxide target. Resistivity measurement results indicate that these films are superconducting with a zero resistance Tc as high as 76 K, without further high-temperature post-annealing treatments. These films give both core and valence-band x-ray photoemission, and x-ray diffraction spectra similar to those for superconducting films prepared with a high-temperature post-annealing step. No significant diffusion of Si from the substrate into the film was detected for the films deposited at 650 °C or lower, according to depth profiles obtained using secondary ion mass spectrometry.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 1988
- DOI:
- 10.1063/1.99771
- Bibcode:
- 1988ApPhL..52.2263L
- Keywords:
-
- Copper Oxides;
- High Temperature Superconductors;
- Magnetron Sputtering;
- Mixed Oxides;
- Superconducting Films;
- Thin Films;
- Yttrium Oxides;
- Barium Compounds;
- Electron Microscopy;
- Silicon;
- Stoichiometry;
- Solid-State Physics