Cathodoluminescence observation of metallization-induced stress variations in GaAs/AlGaAs multiple quantum well structures
Abstract
Cathodoluminescence scanning electron microscopy is utilized to investigate the stresses present underneath 0.4 μm gold layers deposited on GaAs/AlGaAs multiple quantum well structures grown by molecular beam epitaxy on GaAs substrates. Using the known stress dependence of excitonic lines in quantum wells, the magnitude of stress is determined to be about 1 kbar. The stress-induced change in the refractive index, attributed to photoelastic effect, is about 0.01 for the structures studied in the present work.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1988
- DOI:
- Bibcode:
- 1988ApPhL..52.1806Y
- Keywords:
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- Aluminum Gallium Arsenides;
- Cathodoluminescence;
- Crystal Growth;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Electron Microscopy;
- Optoelectronic Devices;
- Photoelasticity;
- Solid-State Physics