Sputter deposition of YBa2Cu3O6+x on alumina and the influence of ZrO2 buffer layers
Abstract
The deposition of films of YBa2Cu3O6+x by rf diode sputtering on alumina has been investigated. Although a stoichiometric (123) target was employed, the film composition differs from that of the target and varies as a function of position on the substrate. Films displaying a broad resistive transition have been produced in a reproducible manner. It is demonstrated that the use of a ZrO2 buffer layer decreases the transition width significantly and consistently yields films which have a more metallic-like behavior above Tc.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1988
- DOI:
- 10.1063/1.99720
- Bibcode:
- 1988ApPhL..52.1746S
- Keywords:
-
- Barium Oxides;
- Copper Oxides;
- High Temperature Superconductors;
- Sputtering;
- Yttrium Oxides;
- Zirconium Oxides;
- Aluminum Oxides;
- Electrical Resistivity;
- Strontium Titanates;
- Thin Films;
- Solid-State Physics