Extremely high negative photoconductivity in p-modulation-doped GaAs quantum wells
Abstract
In p-modulation-doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in-plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1988
- DOI:
- Bibcode:
- 1988ApPhL..52..801H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Modulation Doping;
- P-Type Semiconductors;
- Photoconductivity;
- Quantum Wells;
- Carrier Mobility;
- Gallium Arsenides;
- Negative Conductance;
- Solid-State Physics