Electronic and chemical structure of 3-5/metal and Si/metal interfaces

Over the past year, we have carried out an experimental program to investigate the electronic states and band structure at GaAs, InP, InxGa1-xAs, GaP, and Si/metal interfaces and their relationship to the chemical reactions and interdiffusion which evolve at room temperature and elevated temperatures. We have used soft X-ray photoemission spectroscopy to determine Fermi level movements and atomic redistribution during initial states of Schottky barrier formation and conventional electrical techniques to characterize transport mechanisms across these junctions. We have used cathodoluminescence spectroscopy to observe optical emission from interfaces states and their evolution with metal coverages. This annual report for the period October 1, 1986 through September 30, 1987 defines (Sec. II) and summarizes (Sec. III) the bulk of this research and includes the papers published or in press as a result of this effort.