Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems
Abstract
This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the Computer Aided Design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.
- Publication:
-
California Univ., San Diego Report
- Pub Date:
- August 1987
- Bibcode:
- 1987ucsd.rept.....K
- Keywords:
-
- High Electron Mobility Transistors;
- Computer Aided Design;
- Integrated Circuits;
- Microwave Circuits;
- Millimeter Waves;
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Broadband;
- Distributed Amplifiers;
- Gates (Circuits);
- Models;
- Two Dimensional Models;
- Electronics and Electrical Engineering