Research of MBE growth and properties of semiconductors hetero-interfaces with unusual band lineups
Abstract
A wide diversity of topics related to various new properties of semiconductor heterostructures was investigated: (1) Staggered-lineup luminescence; (2) Band offsets at lattice-matched (Ga,In) P/GaAs heterojunctions; (3) Optical properties of GaSb/AlSb multi-quantum well structures; (4) Growth of InAs/GaSb broken-gap heterojunctions; (5) Alternating-beam MBE; (6) Tilted super-lattices; and (7) Schottky barriers between metals and semiconducting polymers. The determination of the band lineups at the (Ga,In) P/GaAs heterojunction, and the achievement of tilted super-lattices by alternating-beam MBE were probably the most significant of these developments. The latter of these two forms the core of research under an ongoing follow-up contract.
- Publication:
-
Final Report
- Pub Date:
- September 1987
- Bibcode:
- 1987ucsb.rept.....K
- Keywords:
-
- Heterojunctions;
- Molecular Beam Epitaxy;
- Quantum Electronics;
- Schottky Diodes;
- Semiconductors (Materials);
- Aluminum;
- Antimonides;
- Contracts;
- Cores;
- Gallium Antimonides;
- Gallium Arsenides;
- Gallium Phosphides;
- Growth;
- Indium Arsenides;
- Indium Phosphides;
- Metals;
- Optical Properties;
- Solid-State Physics