First report on InGaAs hall device
Abstract
A Hall device is reported on which was prepared with InGaAs by planar technology. At the same carrier concentration, the sensitivity of InGaAs is 50 percent higher than that of a GaAs Hall device. Its energy consumption is low and its ohmic contact is good. It can operate in a wide temperature range (4 to 480 K or -50 to 200 C) because of its high carrier mobility and low temperature dependence characteristics. Although it has a narrower bandgap, it has a lower contact potential barrier. A 4 K, the device can operate in a strong magnetic field of up to 80 kG. The magnetic density of such a InGaAs Hall device was determined to be up to 80 kG at 4.2 K.
- Publication:
-
JPRS Report: Science and Technology. China
- Pub Date:
- November 1987
- Bibcode:
- 1987rstc.rept...48Z
- Keywords:
-
- Carrier Density (Solid State);
- Carrier Mobility;
- Gallium Arsenides;
- Hall Effect;
- Indium Arsenides;
- Energy Consumption;
- Liquid Phase Epitaxy;
- Magnetic Fields;
- Temperature Dependence;
- Solid-State Physics