The influence of carbon, silicon carbide and silicon nitride on the properties of cast polycrystalline silicon used for solar cells
Abstract
During casting of ingots by the method of directional solidification, SiC particles were added to the ingots in order to study the influence of C and SiC on the properties of polycrystalline silicon solar cells. Refined metallurgical-grade silicon was used to cast the ingots. The study is carried out for inferior crystal structure which is associated with inclusions and precipitates, including both fine-grain and figure structure. The effect of Si3N4 particles on the electrical properties of solar cells was also investigated.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf..895L
- Keywords:
-
- Carbon;
- Crystal Structure;
- Electrical Properties;
- Silicon Carbides;
- Silicon Nitrides;
- Solar Cells;
- Directional Solidification (Crystals);
- Inclusions;
- Polycrystals;
- Silicon;
- Electronics and Electrical Engineering