An n-AlGaAs p-GaAs graded heterojunction for high concentration ratios
Abstract
As an attempt to increase the maximum power output of a p-n-junction solar cell, a cell design which combines both a wide-band gap material - AlxGa1-xAs - and a narrow-band gap material - GaAs - is proposed and analyzed. As verified by numerical analysis, the advantages of the n-p+ anisotype heterojunction cell are that the compositional grading is inside the depletion region and that the open-circuit voltage is higher than that attainable with a homojunction cell.
- Publication:
-
19th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1987
- Bibcode:
- 1987pvsp.conf...81F
- Keywords:
-
- Aluminum Gallium Arsenides;
- Gallium Arsenides;
- Heterojunctions;
- P-N Junctions;
- Solar Cells;
- Energy Conversion Efficiency;
- Open Circuit Voltage;
- Electronics and Electrical Engineering