Electrical behavior of layers implanted with low energy pions in Si

The electrical behavior of P implanted layers in p-Si, obtained through ionic implantation layers, was investigated with 12 KeV of energy for 6 different doses, which varied from 10 to the 12th to 10 to the 16th/sq cm. The electrical properties are examined through resistivity measurements of the sheets by temperature functions 300 to 4.2 K. The distribution determination of carrier density and mobility depth was obtained through half measurements of Hall and resistivity coefficients of the sheets, since displacement of successive finished layer shows implantation through anodic oxidation of the Si. The measured results are interpreted using a simplified model which takes into account the distribution in the depth of the impurities and compensation. The analysis of the conductivity behavior with the temperature indicates the existence of two regimes of conductivity. The highest temperature region, the activation energy can be interpreted in terms of experimental and theoretical results which are joined in the literature of Si doped with P. For most decreasing temperatures, the activation energy obtained, indicates the presence of compensating defects.