Intermixing at InAs/GaAs and GaAs/InAs interfaces
Abstract
We have investigated the build-up by molecular beam epitaxy of InAs/GaAs and GaAs/InAs interfaces in search of In/Ga intermixing by Auger and X-ray photoemission spectroscopies. No significant intermixing occurs at the InAs/GaAs interface, while nearly one monolayer of InAs is driven to the surface during the deposition of the first GaAs layer, and gradually dissolves in the next 20 Å of GaAs. Consequences on the geometry of monolayer-sized InAs/GaAs heterostructures are discussed.
- Publication:
-
Surface Science
- Pub Date:
- October 1987
- DOI:
- 10.1016/S0039-6028(87)80547-2
- Bibcode:
- 1987SurSc.189.1041G