Glow discharge deposited a-Si:H,Al thin films
Abstract
The modification of the electrical and optical properties of a-Si:H by the incorporation of aluminum has been studied. The a-Si:H,Al films were obtained by means of dc glow discharge decomposition of gas silane and simultaneous evaporation of aluminum using the same discharge conditions and varying only the evaporation rate of Al. The study of the films properties includes V-NIR transmission spectroscopy, temperature dependence of dark conductivity, and steady state photoconductivity. From the measurements, an important variation of both optical gap and dark conductivity has been observed as the aluminum content in the films increases. Electrical conduction probably takes place, in the analyzed temperature range (300-450 K), through extended states of the valence band. It has also been observed that the normalized photoconductivity of the slightly Al doped films is three or four orders of magnitude lower than that of undoped a-Si:H film.
- Publication:
-
Solar Energy Materials
- Pub Date:
- April 1987
- Bibcode:
- 1987SoEnM..15..167A
- Keywords:
-
- Aluminum;
- Doped Crystals;
- Glow Discharges;
- Silanes;
- Thin Films;
- Vapor Deposition;
- Electrical Properties;
- Optical Properties;
- P-Type Semiconductors;
- Vapor Phases;
- Solid-State Physics