hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa
Abstract
The pressure-induced phase sequence of silicon has been studied to 100 GPa by energy-dispersive x-ray diffraction techniques. A new phase transition from hexagonal close-packed to face-centered cubic was observed at a volume compression of V/V0=0.481+/-0.005 and 78+/-3 GPa, in excellent agreement with first-principles calculations of the phase stability of silicon at high pressures. This represents the lowest atomic number material for which a structural determination has been made to 100 GPa.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 1987
- DOI:
- 10.1103/PhysRevLett.58.775
- Bibcode:
- 1987PhRvL..58..775D
- Keywords:
-
- Face Centered Cubic Lattices;
- Hexagonal Cells;
- High Pressure;
- Phase Transformations;
- Silicon;
- X Ray Diffraction;
- Equations Of State;
- Pressure Effects;
- Transition Metals;
- Solid-State Physics;
- 64.70.Kb;
- 62.50.+p;
- 64.30.+t;
- Solid-solid transitions;
- High-pressure and shock wave effects in solids and liquids;
- Equations of state of specific substances