a Study of Deep Levels in COPPER-INDIUM-SELENIUM(2) by Current-Voltage Capacitance-Voltage and Capacitance Transient Measurements on Cadmium-Sulfide -SELENIUM(2)
Abstract
A study was made of the deep levels in CuInSe _ 2 thin films by Current-Voltage, Capacitance-Voltage, Capacitance-Temperature, and Capacitance Transient measurements on CdS/CuInSe_ 2 solar cells. To accomplish this study, a semi -automated system for Current-Voltage (I-V), Capacitance -Voltage (C-V), and Deep Level Transient Spectroscopy (DLTS) has been developed for the study of semiconductor devices. I -V, C-V, and DLTS measurements can be taken over a wide temperature range, from 100 K up to 450 K. Software for processing the data obtained has also been developed. This thesis presents the first reported successful measurements of deep levels in CuInSe_ 2 by DLTS measurements. The results indicate the presence in the p-type CuInSe_ 2 films of a majority-carrier (hole) trap located 0.70 eV above the valence band edge and a minority-carrier (electron) trap located 0.35 eV below the conduction band edge. Simulation studies show that the width and shape of the DLTS spectra for the hole trap can be explained only by assuming that the traps are distributed in energy around 0.70 eV. Our results are consistent with traps distributed from 0.65 to 0.75 eV, but it is not possible to determine uniquely the exact distribution. The electron trap at 0.35 eV does is not distributed in energy. There is strong evidence from the C-V, C-T, and I-V measurements, and indirectly from the DLTS measurements, that there is a large hole trap concentration in the CuInSe _ 2 layer close to the interface with the CdS. These interface states have a concentration of approximately 5 times 10 ^{15} cm^{ -3}, compared to a doping density in the CuInSe _ 2 layer of 1 times 10^{15} cm ^{-3}, a hole trap concentration of 5 times 10^{14 } cm^{-3}, and an electron trap concentration of 0.5 times 10^{14} cm ^{-3}. The I-V measurements are consistent with charge transport via an interface recombination/tunneling mechanism, where the tunneling is assisted by the interface states.
- Publication:
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Ph.D. Thesis
- Pub Date:
- 1987
- Bibcode:
- 1987PhDT.......145C
- Keywords:
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- Physics: Condensed Matter