Investigation of electronic band structure of semiconductors by photoemission
Abstract
Development and operation of a 2-D electron energy analyzer similar to ellipsoid mirror analyzer filter principle and its application to angle integrated synchrotron beam apparatus are described. Band structures of InSb, InP, Sn semiconductors are examined by photoelectron emission perpendicular to the sample surface. By variation of the excitation energy the electron wave vectors of Brillouin zone are analyzed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1987
- Bibcode:
- 1987PhDT........28M
- Keywords:
-
- Conduction Bands;
- Energy Bands;
- Photoelectric Emission;
- Semiconductor Devices;
- Electron States;
- Electron Transitions;
- Excitation;
- Indium Antimonides;
- Solid-State Physics