Influence of boundary surface roughness, order effects and dopants on optical properties of InP based metal organic gas phase epitaxy (MOCVD) heterostructure
Abstract
Optical properties of AlInAs/GaInAs and GaInAsP/InP heterostructures in MOCVD were analyzed. Separation and quantification of the diffusion mechanism is studied in relation with growth mechanisms. Measurement methods and epitaxy procedures are explained and characterization methods of APMOCVD (by atmospheric pressure) are given.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- May 1987
- Bibcode:
- 1987PhDT.........6O
- Keywords:
-
- Doped Crystals;
- Epitaxy;
- Optical Properties;
- Phase Transformations;
- Crystal Structure;
- Crystallography;
- Order-Disorder Transformations;
- Solid-State Physics