P(+)-Pi-N(+) structures based on double-injected silicon carbide

The properties of diode structures with a p-conductivity base region doped by a deep acceptor impurity, such as boron, scandium, and beryllium, are investigated experimentally using scandium- and aluminum-doped P(+)-Pi-N(+) silicon carbide structures. It is noted that the three-layer diode investigated here is an SiC analog of P-I-N diodes, but its power and microwave signal frequency characteristics should exceed those of the existing P-I-N diodes.