High-sensitivity photodiodes based on the structure semiconductor-tunnel dielectric-semiconductor
Abstract
Results of an experimental study of the photoresponse of isotype tunnel structures based on In2O3:Sn-SiO2-Si, which are characterized by high internal photocurrent amplification, are reported. It is found that the absolute current sensitivity of the structure investigated is as high as 100 A/W, which is a factor of 200 higher than that of silicon photodiodes without internal amplification. Due to their high sensitivity and simplicity, such photodiodes have potential for use as photodetectors, in switching devices, and in optotron pairs when a current transmission factor greater than 1 is required.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- July 1987
- Bibcode:
- 1987PZhTF..13..769M
- Keywords:
-
- Indium Compounds;
- Photodiodes;
- Semiconductor Devices;
- Silicon;
- Silicon Dioxide;
- Tin;
- Amplification;
- Electric Current;
- Numerical Analysis;
- Electronics and Electrical Engineering