Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature
Abstract
Room-temperature continuous-wave operation of large-area (120 x 980 microns) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/sq cm (1900-micron cavity length), maximum slope efficiencies of about 0.8 W/A (600-micron cavity length), and optical power in excess of 270 mW/facet (900-micron cavity length) have been observed under pulsed conditions.
- Publication:
-
Optics Letters
- Pub Date:
- October 1987
- DOI:
- 10.1364/OL.12.000812
- Bibcode:
- 1987OptL...12..812C
- Keywords:
-
- Continuous Wave Lasers;
- Gallium Arsenide Lasers;
- Gradient Index Optics;
- Injection Lasers;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Current Density;
- Room Temperature;
- Silicon;
- Substrates;
- Lasers and Masers