Raman spectroscopy identification of intergrowths of silicon carbide polytypes
Abstract
The problems associated with the identification of SiC polytypes are briefly examined, and it is shown that such identification can be efficiently accomplished by Raman spectroscopy. It is demonstrated that results obtained by Raman spectroscopy are as accurate as those obtained by X-ray diffraction and luminescent analyses, while containing more information in the case of absorbed emission excitation. Besides, in contrast to the commonly used luminescent method, Raman spectroscopy does not require additional specimen doping and can readily detect three or more polytypes in an intergrowth.
- Publication:
-
Optoelektronika i Poluprovodnikovaia Tekhnika
- Pub Date:
- 1987
- Bibcode:
- 1987OpPuT..12...12A
- Keywords:
-
- Crystal Growth;
- Crystal Lattices;
- Polycrystals;
- Raman Spectra;
- Silicon Carbides;
- Electro-Optics;
- Microelectronics;
- Photoluminescence;
- X Ray Diffraction;
- Solid-State Physics