Noise parameters of microwave transistors
Abstract
Modern design techniques require that microwave transistors optimized for low-noise performance have both S-parameter and noise parameter characterizations. This paper proposes a method for verifying the accuracy and consistency of these two data sets using plots of noise and gain circles in the input Gamma sub g plane. This approach is applied to both silicon bipolar transistors and GaAs FETs.
- Publication:
-
Microwave Journal
- Pub Date:
- November 1987
- Bibcode:
- 1987MiJo...30..177V
- Keywords:
-
- Bipolar Transistors;
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Circuits;
- Noise Spectra;
- Electronics and Electrical Engineering