X-band GaAs single-chip T/R radar module
Abstract
The circuit design of X-band GaAs single-chip transmit/receive (T/R) radar modules and the process used to fabricate the modules is described. The results of the RF measurements of one of the single-chip T/R modules are presented. The transmit path, which includes the four-bit phase shifter, four-stage power amplifier, and two T/R switches, generated 501 mW of output power with a 20-dB gain. The power-added efficiency was 12.5 percent, and the receiver path had 18 dB gain with a 5.5 dB noise figure. Phase data are included.
- Publication:
-
Microwave Journal
- Pub Date:
- September 1987
- Bibcode:
- 1987MiJo...30..167W
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Phase Shift Circuits;
- Phased Arrays;
- Radar Equipment;
- Superhigh Frequencies;
- Transmitter Receivers;
- Chips (Electronics);
- Fabrication;
- Field Effect Transistors;
- Insertion Loss;
- Lithography;
- Low Noise;
- Microwave Amplifiers;
- Electronics and Electrical Engineering