A New-Type 1.5∼ 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
Abstract
A new-type BIG-DBR laser was fabricated by introducing an island-type mesa process to improve the fabrication yield of the smooth joint portion between an active and an external waveguide. Improved device properties such as a threshold current of 35 mA, a light output power of 12.4 mW and a differential quantum efficiency of 22.1%/facet were obtained under the CW operation for this laser with an active region length of 400 μm and a stripe width of 3 μm. The temperature range for a fixed single-mode operation exceeded 70 degrees around room temperature.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- October 1987
- DOI:
- 10.1143/JJAP.26.L1593
- Bibcode:
- 1987JaJAP..26L1593C
- Keywords:
-
- Dbr Lasers;
- Laser Outputs;
- Optical Communication;
- Quantum Efficiency;
- Semiconductor Lasers;
- Threshold Currents;
- Fabrication;
- Gallium Arsenides;
- Indium Phosphides;
- Integrated Circuits;
- Liquid Phase Epitaxy;
- Lasers and Masers