Deep Levels in Argon-Implanted and Annealed Indium Phosphide

Deep levels in InP caused by Ar-ion implantation and their annealing behaviours by rapid halogen lamp (RHL) annealing in the temperature range from 740 to 935°C were invesitigated using deep level transient spectroscopy (DLTS) and photoluminescence (PL). The DLTS measurements showed that the RHL annealing, alone, induced electron trap levels E2(0.52 eV) at low temperatures and E1(0.65 eV) at high temperatures. The Ar-ion implantation increased the E2 trap density by two orders of magnitude and caused new traps: E3(0.37 eV), E4(0.25 eV), E5(0.19 eV) and E6(0.17 eV). Subsequent RHL annealing decreased the E3-E6 traps below the detection limit (above 880°C) and E2 to the same level as that of unimplanted/annealed InP at 920°C. Results of the PL measurements are also presented and discussed in relation to the DLTS measurements.