Internal Loss and Gain Factor of InGaAsP/GaAs Laser
Abstract
The internal loss α and gain factor β of InGaAsP/GaAs double-heterostructure lasers were examined by immersing laser chips into various liquids and changing the reflectivities of a Fabry-Perot mirror. Only a small scatter was found; we evaluated α and β as 20.6 cm-1 and 0.0129 cm\cdotA-1, respectively. The value of α was compared with the loss of AlGaAs/GaAs lasers.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- March 1987
- DOI:
- Bibcode:
- 1987JaJAP..26..501I
- Keywords:
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- Current Density;
- Gallium Arsenide Lasers;
- Power Gain;
- Reflectance;
- Silicon Dioxide;
- Threshold Currents;
- Heterojunction Devices;
- Indium Phosphides;
- Lasing;
- Least Squares Method;
- Methyl Alcohol;
- Lasers and Masers