Preparation and characterization of MoCx thin films
Abstract
Stoichiometric MoC has been calculated to have aTcof 16 K. To check this prediction, thin films of MoCxwere prepared by sputtering both reactively with CH4 and using a composite Mo-C target. The preparation conditions were varied over wide ranges of composition, substrate temperature, Ar pressure, and bias voltage. The single-phase B1 structure is formed for substrate temperatures between ‑100 and 1100°C withTcvalues up to 12 K. TheTcrises with increasing lattice parametera0. While films down to about 38 at % C were made, it was not possible to prepare samples with more than about 41 at % C in the B1 phase by this nonequilibrium technique. A linear extrapolation of theTcversusa0 plot yields aTcvalue of about 26 K and ana0 value of about 0.434 nm for stoichiometric composition. The temperature-dependent specific resistivity is discussed.
- Publication:
-
Journal of Low Temperature Physics
- Pub Date:
- November 1987
- DOI:
- 10.1007/BF00682660
- Bibcode:
- 1987JLTP...69..245H
- Keywords:
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- Thin Film;
- Magnetic Material;
- Substrate Temperature;
- Bias Voltage;
- Preparation Condition