Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors
Abstract
This work investigates the use of pseudomorphic Ga 1-yIn yAs in the base of the Heterojunction Bipolar Transistor (HBT) as an alternative to GaAs. The strain induced by the lattice mismatch between GaAs and Ga 1-yIn yAs results in a decrease in common emitter current gain (β) when a uniform Ga 1-yIn yAs base is utilized. However, grading the In composition throughout the base in order to achieve a built-in quasi-electric field results in an increase in β.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- February 1987
- DOI:
- 10.1016/0022-0248(87)90420-9
- Bibcode:
- 1987JCrGr..81..378E