Optical techniques in submicron lithography
Abstract
The paper examines an optical technique for improving the lithographic characteristics of high-resolution resists. The proposed technique involves the intensification of absorption in the transparence band of polymer resists in connection with the selective breaking (or joining) of polymer chains; this is achieved through photodestruction or photorestructuring initiated by the absorption of induced centers. Results are presented for PMMA.
- Publication:
-
Akademiia Nauk SSSR Izvestiia Seriia Fizicheskaia
- Pub Date:
- February 1987
- Bibcode:
- 1987IzSSR..51..372G
- Keywords:
-
- Lithography;
- Microelectronics;
- Optical Properties;
- Optical Thickness;
- Photoabsorption;
- Polymer Physics;
- Polymethyl Methacrylate;
- Electronics and Electrical Engineering