IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1987
- DOI:
- 10.1109/T-ED.1987.23248
- Bibcode:
- 1987ITED...34.2357A