Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide
Abstract
The effect of mobility degradation on the intervalley transfer of electrons in gallium arsenide and indium gallium arsenide is studied. A considerable degradation of the mobility at high electric fields takes place for valleys with high low-field ohmic mobility. The momentum relaxation time is found to degrade with high electric field, giving the impression of high collision broadening at high electric fields. Similar degradation is expected for the mean free path. The relationship of the high-field transport in terms of ohmic transport parameters is elaborated to explain the transferred electron effect.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1987
- DOI:
- 10.1109/T-ED.1987.23075
- Bibcode:
- 1987ITED...34.1231A
- Keywords:
-
- Electron Mobility;
- Electron Transfer;
- Gallium Arsenides;
- Gunn Effect;
- Band Structure Of Solids;
- Electric Field Strength;
- Indium Arsenides;
- Modulation Doping;
- Monte Carlo Method;
- Electronics and Electrical Engineering