An FET-driven power thyristor
Abstract
A power thyristor structure which has a bipolar gate and an FET-driven gate on orthogonal sides of a quadratic chip is examined. The turn-on behaviors of both gates are investigated experimentally. An analytical model is also used to evaluate the time-dependent thyristor current. It is detected that the FET-drive leads to a higher dissipation during turn-on and the current threshold for turn-on is higher. Good correlation between the experimental and theoretical data for both gates is obtained. The advantages of an FET-driven thyristor are discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1987
- DOI:
- 10.1109/T-ED.1987.23060
- Bibcode:
- 1987ITED...34.1170S
- Keywords:
-
- Bipolar Transistors;
- Chips (Electronics);
- Field Effect Transistors;
- Gates (Circuits);
- N-Type Semiconductors;
- Thyristors;
- Equivalent Circuits;
- Metal Oxide Semiconductors;
- P-N Junctions;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering