Two-dimensional thermal oxidation of silicon. I - Experiments
Abstract
This paper introduces a unique experimental approach in which extensive data were obtained concerning the oxidation of cylindrical silicon structures of controlled radii of curvature. It is quantitatively demonstrated that the oxidation of curved silicon surfaces is retarded at low temperatures and sharp curvatures, and that the retardation is more severe on concave than convex structures. These observations will be interpreted using a physical model based on stress effects on oxide growth parameters.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1987
- DOI:
- 10.1109/T-ED.1987.23037
- Bibcode:
- 1987ITED...34.1008K
- Keywords:
-
- Crystal Structure;
- Doped Crystals;
- Integrated Circuits;
- Oxidation;
- Polycrystals;
- Silicon;
- Hot Corrosion;
- Microstructure;
- N-Type Semiconductors;
- Silicon Dioxide;
- Electronics and Electrical Engineering