n(+)-p-p(+) structure InP solar cells grown by organometallic vapor-phase epitaxy
Abstract
The fabrication of n(+)-p-p(+) InP solar cells by OMVPE has been studied. A conversion efficiency (active area) as high as 20 percent under AM1.5 illumination has been obtained. It is experimentally verified that the n(+)-p-p(+) InP solar cell has a higher resistance to radiation degradation than the n(+)-p InP solar cell. Diode characteristics and photovoltaic performances, such as saturation current density, diode-ideality factor, and open-circuit voltage for the n(+)-p-p(+) cells are found to drastically deteriorate when junction depth decreases to 0.15 micron or less. The electron concentration dependence of a hole diffusion length in n-InP is estimated from the measurement of photoluminescence spectra.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1987
- DOI:
- 10.1109/T-ED.1987.22995
- Bibcode:
- 1987ITED...34..772S
- Keywords:
-
- Energy Conversion Efficiency;
- Indium Phosphides;
- Organometallic Compounds;
- P-N-P Junctions;
- Solar Cells;
- Vapor Phase Epitaxy;
- Current Density;
- Electron Density (Concentration);
- Minority Carriers;
- Photoluminescence;
- Electronics and Electrical Engineering