AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
Abstract
The paper describes a self-aligned heterojunction-bipolar-transistor process based on a simple dual-lift-off method. Transistors with emitter width down to 1.2 microns and base doping up to 1 x 10 to the 20th/cu cm have been fabricated. Extrapolated current gain cutoff frequency of 55 GHz and maximum frequency of oscillation of 105 GHz have been obtained. Current-mode-logic ring oscillators with propagation delays as low as 14.2 ps have been demonstrated. These are record performance results for bipolar transistors. The dual-lift-off process is promising for both millimeter-wave devices and large-scale integrated circuit fabrication.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1987
- DOI:
- 10.1109/EDL.1987.26639
- Bibcode:
- 1987IEDL....8..303C
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Heterojunctions;
- Microwave Oscillators;
- Self Alignment;
- Volt-Ampere Characteristics;
- Doped Crystals;
- Fabrication;
- Gallium Arsenides;
- Integrated Circuits;
- Millimeter Waves;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering