MESFET's on a GaAs-on-insulator structure
Abstract
MESFET's were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy on a GaAs substrate covered with a crystalline insulator film, Ca(x)Sr(1-x)F2. The gm value of 71 mS/mm was obtained for an FET with a gate length of 3 microns. Complete isolation of MESFET's by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- June 1987
- DOI:
- 10.1109/EDL.1987.26629
- Bibcode:
- 1987IEDL....8..277T
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Schottky Diodes;
- Soi (Semiconductors);
- Etching;
- Insulators;
- Integrated Circuits;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering