Monolithic integration of a transverse-junction stripe laser and metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate
Abstract
A buried transverse-junction stripe laser diode and two metal-semiconductor field-effect transistors were monolithically integrated using two-step molecular beam epitaxy. This device had an almost flat surface well suited for the integration. High performance and high-speed operation have been demonstrated in this integrated device for the first time.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1987
- DOI:
- 10.1049/el:19870368
- Bibcode:
- 1987ElL....23..509O
- Keywords:
-
- Field Effect Transistors;
- Heterojunction Devices;
- Integrated Circuits;
- Quantum Efficiency;
- Schottky Diodes;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Substrates;
- Electronics and Electrical Engineering